Mechanism of germanium-induced perimeter crystallization of amorphous silicon

We report a study aimed at highlighting the mechanism of a new amorphous silicon crystallization phenomenon that originates from the perimeter of a germanium layer during low-temperature annealing 500°C. Results are reported on doped and undoped amorphous silicon films, with thicknesses in the range...

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Bibliographic Details
Main Authors: Hakim, M.M.A (Author), Ashburn, P. (Author)
Format: Article
Language:English
Published: 2007-04.
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