Mechanism of germanium-induced perimeter crystallization of amorphous silicon
We report a study aimed at highlighting the mechanism of a new amorphous silicon crystallization phenomenon that originates from the perimeter of a germanium layer during low-temperature annealing 500°C. Results are reported on doped and undoped amorphous silicon films, with thicknesses in the range...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
2007-04.
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| Subjects: | |
| Online Access: | Get fulltext Get fulltext |