Mechanism of germanium-induced perimeter crystallization of amorphous silicon
We report a study aimed at highlighting the mechanism of a new amorphous silicon crystallization phenomenon that originates from the perimeter of a germanium layer during low-temperature annealing 500°C. Results are reported on doped and undoped amorphous silicon films, with thicknesses in the range...
Main Authors: | Hakim, M.M.A (Author), Ashburn, P. (Author) |
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Format: | Article |
Language: | English |
Published: |
2007-04.
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Subjects: | |
Online Access: | Get fulltext Get fulltext |
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