Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors
Switching of single-electron transport is observed in point-contact transistors fabricated in nanocrystalline silicon thin films, where the grain size is ~10-40nm. The effects may be associated with electrostatic coupling between the grains. At 4.2K, single-electron oscillations in the device curren...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2003-12.
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| Subjects: | |
| Online Access: | Get fulltext |