Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
1994.
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| Subjects: | |
| Online Access: | Get fulltext |
| LEADER | 00455 am a22001453u 4500 | ||
|---|---|---|---|
| 001 | 266255 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Goodings, C.J. |e author |
| 700 | 1 | 0 | |a Mizuta, Hiroshi |e author |
| 700 | 1 | 0 | |a Cleaver, J.R.A. |e author |
| 700 | 1 | 0 | |a Ahmed, H. |e author |
| 245 | 0 | 0 | |a Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates |
| 260 | |c 1994. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/266255/1/paper_24.pdf | ||
| 655 | 7 | |a Article | |