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| LEADER |
01067 am a22001693u 4500 |
| 001 |
268005 |
| 042 |
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|a dc
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| 100 |
1 |
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|a Apostolopoulos, V.
|e author
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1 |
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|a Hickey, L.M.B.
|e author
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| 700 |
1 |
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|a Sager, D.A.
|e author
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|a Wilkinson, J.S.
|e author
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| 245 |
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|a Gallium-diffused waveguides in sapphire
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| 260 |
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|c 2001.
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| 856 |
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|z Get fulltext
|u https://eprints.soton.ac.uk/268005/1/2306.pdf
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|a The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10<sup>-2</sup>. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.
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|a accepted_manuscript
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|a Article
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