Proximity induced enhancement of the Curie temperature in hybrid spin injection devices
We investigate the increase of the Curie temperature TC in a lateral spin injection geometry where the ferromagnetic (Ga,Mn)As injector and detector contacts are capped by a thin iron film. Because of interlayer coupling between Fe and (Ga,Mn)As TC gets enhanced by nearly 100% for the thinnest (Ga,M...
Main Authors: | Song, C. (Author), Sperl, M. (Author), Utz, M. (Author), Ciorga, M. (Author), Woltersdorf, G. (Author), Schuh, D. (Author), Bougeard, D. (Author), Back, C. (Author), Weiss, D. (Author) |
---|---|
Format: | Article |
Language: | English |
Published: |
2011-07-26.
|
Subjects: | |
Online Access: | Get fulltext |
Similar Items
-
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
by: M. Ciorga, et al.
Published: (2011-06-01) -
Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
by: M. Oltscher, et al.
Published: (2017-11-01) -
Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature
by: L. Chen, et al.
Published: (2016-12-01) -
Topological-Sector Fluctuations and Curie-Law Crossover in Spin Ice
by: L. D. C. Jaubert, et al.
Published: (2013-02-01) -
Ultrafast carrier and spin dynamics in GaMnAs across the Curie temperature
by: Yaohua Jiang, et al.
Published: (2021-02-01)