Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm
The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low inser...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
2013-05-20.
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Subjects: | |
Online Access: | Get fulltext |
Summary: | The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm. |
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