Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm
The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low inser...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2013-05-20.
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| Subjects: | |
| Online Access: | Get fulltext |