Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

• Main Authors: Saito, S. (Author), Suwa, Y. (Author), Arimoto, H. (Author), Sakuma, N. (Author), Hisamoto, D. (Author), Uchiyama, H. (Author), Yamamoto, J. (Author), Sakamizu, T. (Author), Mine, T. (Author), Kimura, S. (Author), Sugawara, T. (Author), Aoki, M. (Author)
• Format: Article
• Language: English
• Published: 2009-12-14.
• Subjects: Article
• Online Access: Get fulltext

We describe the observation of stimulated emissions by current injections into a silicon quantum well. The device consists of a free standing membrane with a distributed feedback resonant cavity fabricated by state-of-the-art silicon processes. The emission spectra have multimode structures peaked in the near-infrared region above the submilliampere threshold currents at room temperatures. Consequently, electronics and photonics should be able to be converged on chips by using silicon quantum well laser diodes.