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01154 am a22001933u 4500 |
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|a Saito, S.
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|a Takahama, T.
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|a Tani, K.
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|a Takahashi, M.
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|a Mine, T.
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|a Suwa, Y.
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|a Hisamoto, D.
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|a Stimulated emission of near-infrared radiation in silicon fin light-emitting diode
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|c 2011-06-28.
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|z Get fulltext
|u https://eprints.soton.ac.uk/353145/1/APL2011.pdf
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|a We propose top-down processes to make silicon multiple quantum wells called fins for a light-emitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si3N4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.
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