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54503 |
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|a Simpson, R.E.
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|a Hewak, D.W.
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|a Fons, P.
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|a Tominaga, J.
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|a Guerin, S.
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|a Hayden, B.E.
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|a Reduction in crystallization time of Sb:Te films through addition of Bi
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|c 2008-04.
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|u https://eprints.soton.ac.uk/54503/1/N.pdf
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|a The electrical, optical, and phase change properties of bismuth doped Sb<sub>8</sub>Te<sub>2</sub> films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb<sub>8</sub>Te<sub>2</sub> materials show potential as the active material in phase change data storage media.
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