Indium tin oxide films by sequential evaporation
In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
1990-08-15.
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| Subjects: | |
| Online Access: | Get fulltext |
| LEADER | 00937 am a22001453u 4500 | ||
|---|---|---|---|
| 001 | 78429 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Yao, J.L. |e author |
| 700 | 1 | 0 | |a Hao, S. |e author |
| 700 | 1 | 0 | |a Wilkinson, J.S. |e author |
| 245 | 0 | 0 | |a Indium tin oxide films by sequential evaporation |
| 260 | |c 1990-08-15. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/78429/1/428.pdf | ||
| 520 | |a In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10<sup>-5</sup> Ω m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films. | ||
| 655 | 7 | |a Article | |