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Edward Yi Chang
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Jing-Neng Yao
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Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Appl...
by
Jing-Neng Yao
,
Yueh-Chin Lin
,
Heng-Tung Hsu
,
Kai-Chun Yang
,
Hisang-Hua Hsu
,
Simon M. Sze
,
Edward Yi Chang
Published 2018-01-01
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Edward Yi Chang
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