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3“... and fabricated for high voltage ESD protection circuit applications. In addition, a comparison is made among...”
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4“... field plates were applied in order to obtain high breakdown voltages. Measurements show...”
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6“... and low turn-on voltage. In addition, by incorporating the trench structure in the design, the electric...”
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8“...碩士 === 國立清華大學 === 電子工程研究所 === 99 === Lateral high-voltage single RESURF GaN MOSFETs on sapphire...”
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9“... dynamic voltage scaling capability. The output voltage of this PMIC can be adjusted by controlling signals...”
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11“... on voltage would be lower. That is, the dual metal SBD will have a higher forward current when biasing...”
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13“... breakdown field and large thermal conductivity. In this thesis, we demonstrate a high-voltage lateral 4H...”
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14“... fabricated and studied. In order to avoid high interface states (Dit) caused by carbon cluster near the SiO2...”
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15“... effect (SCE) control and high device performance. Conventionally, low-energy ion implantation...”
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