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1“... and planar-type AlGaN/GaN, operating at high forward current and high breakdown voltage. In Mesa-type n-GaN...”
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2“... the device with high-resistance AlN buffer layer not only substantially promote the breakdown voltage...”
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3“... the advantages of low turn-on voltage and high current capability. High doping concentration in base to reduce...”
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4“... voltage of AlGaN/GaN Metal-Insulator-Semiconductor Field Effect Transistors (MIS-FETs) by using MOCVD...”
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5“... heterojunction bipolar transistors (DHBTs) with high cut-off frequency and high breakdown voltage. The devices...”
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6“... in worldwide industrial development. GaN-based Schottky barrier diodes (SBDs) with high breakdown voltage, high...”
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7“..., and breakdown voltage of 117 V. High frequency measurements indicate that the devices have current gain cut-off...”
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8“...-mode (E-mode) high power GaN heterostructure field-effect transistor (HFET) are investigated...”
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9“...碩士 === 國立中央大學 === 電機工程學系 === 107 === Lattice matched Al0.83In0.17N/GaN high electron mobility...”
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10“... above. On this design, a normally-off TFET with high on-state current and threshold voltage greater than...”
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11“... characteristics of AlGaN/GaN-based Schottky barrier diodes (SBDs) with a high breakdown voltage and the AlInN...”
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12“... a reasonably low VCE offset voltage and high breakdown voltage. Since the offset voltage is partly...”
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13“... threshold voltage, forty circular type device can achieve 0.44 A high current and 1.3 V threshold voltage...”
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14“... rise to high drive current at low operating voltage. However, the presence of native oxide...”
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15“.... An intuitive approach to this problem is to lower the operation voltage and threshold voltage simultaneously...”
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16“... and characterized by high resolution X-ray diffraction, photoluminescence and Hall measurements so as to examine...”
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17“...碩士 === 國立中央大學 === 電機工程學系 === 101 === Reducing the efficiency droop and turn on voltage of InGaN/GaN...”
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18“...碩士 === 國立中央大學 === 電機工程研究所 === 96 === High quality GaN buffer layer is essential to high performance...”
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19“... turn-on voltage and low offset voltage but also has excellent radio-frequency performance. In order...”
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20“... the advantages of having very high electron mobility for high speed operation, and narrow bandgap for low voltage...”
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