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1“...碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, the design and fabrication of high...”
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2“... an external bias voltage on MIS tunneling structure, once the physical thickness of high-k dielectric is too...”
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3“.... Various insulators with high-permittivity (high-κ) have been proposed and investigated to serve...”
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4“... such transparent and flexible electronics. However, most of ZnO TFTs suffered from high threshold voltage (VT...”
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5“... of ZnON to apply in High-k dielectric layer to improve the operating voltage and then enhance the gate...”
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6“... (LEDs) was enhanced due to the rapid development of epitaxy technique. As a result, a high internal...”
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7“... submicron technology. High-κ materials and metal gate are then urgently required in future CMOS technology...”
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8“... to meet the requirement of low power and high speed operations because of the challenging issues of poly...”
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9“.... However, most of IGZO TFTs suffered from high threshold voltage (VT), poor subshreshold swing (SS...”
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10“... an electro-plating nickel substrate is proposed to realize high power GaN-based LEDs with a real vertical...”
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11“... for the fabricating of 40 mil-high power vertical-structured metallic GaN-based LEDs (VM-LEDs) were proposed. Using a...”
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12“... (nanopore) recessed by focus ion beam (FIB). TiO2 high-k dielectric which is one of the most popular...”
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13“... (TFTs) with excellent film uniformity, high carrier mobility and high transparency have shown high...”
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14“... in the malfunction of devices. Therefore, the search for novel high k materials to serve as alternatives of silicon...”
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15“... is investigated. The sensing electrode based on NiO NSs HTG for 9 h-sample shows a high response of 54.71 mV/pH, a...”
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16“... for the fabrication of vertical-structured GaN-based high power light-emitting diodes (VLEDs). The present design...”
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17“... tendency towards using high-κ materials as gate insulator in the near future. Conventional TFTs usually use...”
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18“... high injection current eventually. Use of electrode geometry design, transparent conductive layers (TCL...”
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19“... PS resistivity were proposed. The first method is to utilize a low/high porosity PS structure. Such a...”
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20“... ZnO-NWs which are with the merits of high aspect-ratio could be a potential material...”
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