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1“...碩士 === 國立交通大學 === 電子工程系所 === 93 === The reliability issues of two-bit storage nitride flash memory...”
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2“... trapping storage flash memories. For today’s SONOS cells, a thicker bottom oxide is employed to improve...”
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3“... effect for a SONOS type flash memory is investigated. Utilizing a numerical analysis based on a multiple...”
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5“... charge distribution in nitride film and read current instability issue in a SONOS type flash memory cell...”
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8“...-volatile flash memory architectures named PHINES (Programming by hot Hole Injection Nitride Electron...”
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10“... to characterize the stress induced low-level leakage current (SILC) in a flash EEPROM cell...”
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11“... flash memories. By controlling program window, the RTS noise at different program window is observed...”
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12“... storage buried diffusion bit-line SONOS flash memory. In a NOR-type SONOS flash memory, channel hot...”
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13“... devices including cell phones, PDAs, and smart cards. Flash memories dominate this market today. However...”
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14“... special type SONOS flash EEPROM cells, which include program/erase cycling endurance, program-state charge...”
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15“... structures. This model can be used for hot carrier simulation in flash memory devices during channel hot...”
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16“... may have great impact on the reliability of flash EEPROM devices and was investigated...”
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17“... of threshold voltage shift with read-disturb time in a flash EEPROM cell is derived. In addition, we found...”
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