A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

by Yu-Ting Su, Hsi-Wen Liu, Po-Hsun Chen, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan, Cheng-Hsien Wu, Chih-Cheng Yang, Min-Chuan Wang, Shengdong Zhang, Hao Wang, Simon M. Sze
Published 2018-01-01

Resistance Switching Mechanism, Reliability and Logic Application in 1T1R Structure Resistive Random Access Memory

by Yu-Ting Su, 蘇郁庭
Published 2018