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1“... (60 up inches), high resolution potable electronic device and non-glass 3-D display. These new...”
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2“... the corresponding physical mechanism, develop the potential material and structure of RRAM and stabilize...”
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3“... extensively. Usually, the source/drain with island type device has a large overlapped/contact area that we...”
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4“..., traditional nonvolatile floating gate memory is confronting some physical limits as devices continuously scale...”
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5“... silicon substrate to enhance device performance. By applying uniaxial longitudinal tensile/compressive...”
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6“..., memory devices, and portable devices have become more popular for consumers. These electronic products...”
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7“...博士 === 國立中山大學 === 物理學系研究所 === 101 === This dissertation studies physical mechanisms and reliability...”
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8“... devices, because increase of effective mass of hole and barrier height to decrease the probability...”
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9“... is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property, which...”
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10“... semiconductors will play the important roles for the next optoelectronic devices generation. Zinc oxide (ZnO...”
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11“... semiconductor (CMOS) process. The detail physical mechanism is studied by the stable RRAM device (Ti/HfO2/TiN...”
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12“... to the backplanes of the flat-panel displays. However, operation voltage and/or current can lead to device...”
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13“... of device are observed, including a current crowding effect of current-voltage and a stretch-out...”
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14“...碩士 === 國立中山大學 === 物理學系研究所 === 103 === In this study, the electrical analyses and physical...”
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15“... of displays. However, operation voltage and/or current can lead to device degradation in practical...”
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16“... to these advantages, a-IGZO thin-film transistors are promising as next-generation electronic devices. Although a-IGZO...”
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17“... after hot-carrier stress in symmetric and asymmetric source/drain device indicate that different...”
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18“... physics thickness than thermal oxide (SiO2) under identical equivalent oxide thickness (EOT) and enhances...”
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19“... the physical mechanisms responsible for the device behavior. It’s related to the threshold voltage,iii...”
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20“.... The physical mechanism for these results has been reasonably deduced by use of TFT device simulation tool (ise...”
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