Showing 1 - 20 results of 23 for search 'SEMICONDUCTOR DEVICES', query time: 0.88s Refine Results
  1. 1
    Preparation and Characterization of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
    by Jian-Jiun Huang, 黃健峻
    Published 2009
    “... and devices is a useful method to form metal-oxide-semiconductor HEMT (MOSHEMT). In this thesis, using...”
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  2. 2
    Study on the InGaP/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High Electron Mobility Transistors
    by Hsien-ChengLin, 林顯正
    Published 2012
    “...博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 100 === InGaP/InGaAs metal-oxide-semiconductor pseudomorphic...”
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  3. 3
    Liquid-Phase-Deposited High-κGate Dielectrics on III-V Metal Oxide Semiconductor High Electron Mobility Transistors
    by Chih-ChunHu, 胡智鈞
    Published 2015
    “... devices using a thin insulator film between the gate electrode and the semiconductor. The use...”
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  4. 4
    Enhancement-Mode InAlN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Liquid Phase Deposited Zirconium Oxide
    by Chin-YangHsieh, 謝晉陽
    Published 2016
    “... constant thin film of ZrO2. The deposited ZrO2 can improve device properties by repairing surface defects...”
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  5. 5
    Enhancement Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors using Self-Aligned Gate-Recessed Process
    by Jian-XuanXu, 徐健軒
    Published 2014
    “... gate in AlGaN/GaN HEMTs suffer from high gate leakage current which decrease the devices performance...”
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  6. 6
    Liquid Phase Oxidization on InGaP as the Gate Dielectric for InGaP/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High Electron Mobility Transistors
    by Yu-Chun Cheng, 鄭宇鈞
    Published 2008
    “... that improved InGaP/InGaAs pHEMTs performance. In this work, the gate length and width of the device was 0.7μm...”
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  7. 7
    AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment
    by Shun-KaiYang, 楊舜凱
    Published 2019
    “.... In this work, gate field plate is used to increase the device’s breakdown voltage. In order to reduce gate...”
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  8. 8
    Liquid phase deposition of Al2O3 thin films and its application for GaN and GaAs-based MOSHEMTs
    by Sarbani Basu, 石善怡
    Published 2009
    “.... Recently four novel insulating gate device types—metal-oxide-semiconductor HFET (MOSHFET) metal-insulator...”
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  9. 9
    Solution-Processed ZnO Nanorods, Barium Zirconate Titanate and Poly(4-vinylphenol) for Thin Film Transistor Applications
    by FeriAdriyanto, 飛瑞
    Published 2014
    “... are demonstrated. According to the programming/erasing operations, the devices exhibited memory characteristics...”
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  10. 10
    Broadband Miniaturized Doubly Balanced Mixers and Subharmonic Mixers for Ku- to Ka-band Applications
    by Chih-MingLin, 林志明
    Published 2010
    “... significantly. The active and passive devices fabricated in III-V compound semiconductor technologies exhibit...”
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  11. 11
    Annealing Effects on the Oxide Films of GaAs Prepared by Liquid Phase Chemical-Enhanced Oxidation Method
    by Liang-Tang Wang, 王亮棠
    Published 2001
    “...-V) characteristics of metal-oxide- semiconductor (MOS) devices. In capacitance-voltage (C-V...”
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  12. 12
    High Performance Pentacene-based Thin Film Transistors with Solution-processed High-permittivity Insulators
    by Chia-YuWei, 魏嘉余
    Published 2012
    “...博士 === 國立成功大學 === 光電科學與工程學系 === 100 === Over the past two decades, organic semiconductors have been...”
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  13. 13
    The Study of SAW Filter Response with Microstrip Layout
    by Wein-Tsong Chang, 張文宗
    Published 2004
    “... the measurement. Also, we use semiconductor process to prove our validity and　comparing the difference...”
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  14. 14
    Influence of Interfacial Modification Layer on Both Conjugated Polymer- and Pentacene-based Organic Thin Film Transistors
    by Yu-ChangLi, 李昱璋
    Published 2013
    “... sulfonic acid (PANI-CSA) was proposed. From the experimental results observed, the PANI-CSA device without...”
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  15. 15
    Investigation and Application of Liquid Phase Chemical Enhanced Oxidation Technique on GaAs MOSFET''s
    by Jau-Yi Wu, 吳昭誼
    Published 2001
    “...) technique for gallium arsenide (GaAs) device applications has been proposed. The oxidation system is simple...”
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  16. 16
    Effects of Low Hydrogen Content in the Fabrication of Amorphous Indium-Gallium-Zinc-Oxide Thin-film Transistors
    by Po-HsiaoChen, 陳柏孝
    Published 2012
    “... to the transformation of IGZO thin film from semiconductor to conductor. To prevent hydrogen in substitution for oxygen...”
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  17. 17
    Lithium Fluoride in Organic Thin Film Transistors applications
    by Ying-Guo Chen, 陳英國
    Published 2007
    “...) and pentacene. Additionally, we use conducting polymer, polyaniline (PANI), as active layer in the device...”
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  18. 18
    Study of plasma treatments on GaAs surface and oxide grown by liquid phase chemical enhancement oxidation method
    by Yao-Jun Zhang, 張耀鈞
    Published 2000
    “... device technology. Plasma treatments in H2 and N2 have been reported which considerably reduce the state...”
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  19. 19
    Study of AlGaN/GaN Metal-Oxide-Heterostructure FET with a Liquid Phase Deposited Oxide as Gate Dielectric
    by Shun-Kuan Lin, 林舜寬
    Published 2004
    “... and self- passivation process of LPD can ease the device fabrication. AlGaN/GaN metal oxide semiconductor...”
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  20. 20
    Investigation on Light-Output Enhancement of Light Emitting Diodes by the Nano-roughness structure and Pattern Substrate
    “... (LEDs) to improve the light extraction of the device. The PAA film has a natural porosity, allowing...”
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