Search Results - SEMICONDUCTOR DEVICES

1

Correction: A Novel Silicon Allotrope in the Monoclinic Phase. Materials 2017, 10, 441

by Chaogang Bai, Changchun Chai, Qingyang Fan, Yuqian Liu, Yintang Yang
Published 2017-05-01

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2

Si96: A New Silicon Allotrope with Interesting Physical Properties

by Qingyang Fan, Changchun Chai, Qun Wei, Peikun Zhou, Junqin Zhang, Yintang Yang
Published 2016-04-01

“... is an indirect band gap semiconductor. The anisotropic calculations show that Si96 exhibits a smaller anisotropy...”

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3

Structural, Electronic, and Thermodynamic Properties of Tetragonal t-SixGe3−xN4

by Chenxi Han, Changchun Chai, Qingyang Fan, Jionghao Yang, Yintang Yang
Published 2018-03-01

“...4, and t-Ge3N4 are all wide band gap semiconductor materials, with band gaps of 4.26 eV, 3.94 eV...”

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4

Two Novel C3N4 Phases: Structural, Mechanical and Electronic Properties

by Qingyang Fan, Changchun Chai, Qun Wei, Yintang Yang
Published 2016-05-01

“.... Moreover, m-C3N4 is a quasi-direct-bandgap semiconductor, with a band gap of 4.522 eV, and t-C3N4 is also a...”

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5

Penta-C20: A Superhard Direct Band Gap Carbon Allotrope Composed of Carbon Pentagon

by Wei Zhang, Changchun Chai, Qingyang Fan, Yanxing Song, Yintang Yang
Published 2020-04-01

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6

The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide

by Qingyang Fan, Changchun Chai, Qun Wei, Yintang Yang
Published 2016-04-01

“... results show that SiC2 is an indirect band gap semiconductor, while SiC4 is a quasi-direct band gap...”

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7

Structural, Mechanical, Anisotropic, and Thermal Properties of AlAs in oC12 and hP6 Phases under Pressure

by Wei Zhang, Changchun Chai, Yanxing Song, Qingyang Fan, Yintang Yang
Published 2018-05-01

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8

Elastic anisotropy and electronic properties of Si3N4 under pressures

by Qingyang Fan, Changchun Chai, Qun Wei, Peikun Zhou, Yintang Yang
Published 2016-08-01

“... to be wide band-gap semiconductors. The pressure induced band gap direct-indirect transition is found...”

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9

A New Phase of GaN

by Qingyang Fan, Changchun Chai, Qun Wei, Jionghao Yang, Peikun Zhou, Dongyun Zhang, Yintang Yang
Published 2016-01-01

“... is the three-fifths of wurtzite-GaN. Electronic structure study shows that Pnma-GaN is a direct semiconductor...”

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10

First-Principles Study on Structural, Mechanical, Anisotropic, Electronic and Thermal Properties of III-Phosphides: XP (X = Al, Ga, or In) in the P64</sub...

by Junjie Miao, Changchun Chai, Wei Zhang, Yanxing Song, Yintang Yang
Published 2020-02-01

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11

Structural, elastic, electronic, and anisotropic properties of Pbca-SiC and Pbcn-SiC

by Linchun Kong, Changchun Chai, Yanxing Song, Wei Zhang, Zheren Zhang, Yintang Yang
Published 2021-04-01

“... bandgap semiconductors. Pbca-SiC is an indirect gap semiconductor with a value of 3.724 eV. It is worth...”

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12

Theoretical investigation of group-IV binary compounds in the P4/ncc phase

by Zejian Si, Changchun Chai, Wei Zhang, Yanxing Song, Yintang Yang
Published 2021-07-01

“...Three direct and two indirect semiconductor materials together with one metallic material for group...”

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13

Direct and quasi-direct band gap silicon allotropes with low energy and strong absorption in the visible for photovoltaic applications

by Wei Zhang, Changchun Chai, Qingyang Fan, Yanxing Song, Yintang Yang
Published 2020-09-01

“... are direct or quasi-direct semiconductors with band gaps in the range of 1.193–1.473 eV, and exhibit stronger...”

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