Showing 1 - 10 results of 10 for search 'SEMICONDUCTOR DEVICES', query time: 0.60s Refine Results
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    ... is an indirect band gap semiconductor. The anisotropic calculations show that Si96 exhibits a smaller anisotropy...
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  3. 3
    ...4, and t-Ge3N4 are all wide band gap semiconductor materials, with band gaps of 4.26 eV, 3.94 eV...
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  4. 4
    by Qingyang Fan, Changchun Chai, Qun Wei, Yintang Yang
    Published 2016-05-01
    .... Moreover, m-C3N4 is a quasi-direct-bandgap semiconductor, with a band gap of 4.522 eV, and t-C3N4 is also a...
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    by Qingyang Fan, Changchun Chai, Qun Wei, Yintang Yang
    Published 2016-04-01
    ... results show that SiC2 is an indirect band gap semiconductor, while SiC4 is a quasi-direct band gap...
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    ... to be wide band-gap semiconductors. The pressure induced band gap direct-indirect transition is found...
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  9. 9
    ... is the three-fifths of wurtzite-GaN. Electronic structure study shows that Pnma-GaN is a direct semiconductor...
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  10. 10
    ... are direct or quasi-direct semiconductors with band gaps in the range of 1.193–1.473 eV, and exhibit stronger...
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