-
21“... used on mobile devices and makes it possible to take advantage of NFC system to complete mobile payment...”
Get full text
Article -
22by Linchun Kong, Changchun Chai, Yanxing Song, Wei Zhang, Zheren Zhang, Yintang Yang“... bandgap semiconductors. Pbca-SiC is an indirect gap semiconductor with a value of 3.724 eV. It is worth...”
Published 2021-04-01
Get full text
Article -
23“...Three direct and two indirect semiconductor materials together with one metallic material for group...”
Get full text
Article -
24“... and processed at low cost. Many terminal devices are being deployed in the edge network to sense and deal...”
Get full text
Article -
25by Ping Wang, Linlin Hu, Yintang Yang, Xuefei Shan, Jiuxu Song, Lixin Guo, Zhiyong Zhang“... devices. ...”
Published 2015-01-01
Get full text
Article -
26
-
27
-
28by Hanzhe Yang, Ruidan Su, Pei Huang, Yuhan Bai, Kai Fan, Kan Yang, Hui Li, Yintang YangGet full text
Published 2021-01-01
Article -
29by Kai Fan, Panfei Song, Zhao Du, Haojin Zhu, Hui Li, Yintang Yang, Xinghua Li, Chao YangGet full text
Published 2017-01-01
Article -
30
-
31
-
32by Shunwei Zhu, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li, Yintang Yang“...An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect...”
Published 2019-07-01
Get full text
Article -
33by Hujun Jia, Yuan Liang, Tao Li, Yibo Tong, Shunwei Zhu, Xingyu Wang, Tonghui Zeng, Yintang Yang“...A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space...”
Published 2019-12-01
Get full text
Article -
34by Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang“...An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double...”
Published 2019-08-01
Get full text
Article -
35“... are direct or quasi-direct semiconductors with band gaps in the range of 1.193–1.473 eV, and exhibit stronger...”
Get full text
Article