-
1“... the advantages of low cost and high integration capability. The SoC (system-on-chip) research has being developed...”
Get full text
Others -
2“... at each bias voltage. The energy barrier at high positive bias is about 0.7 V. The subsequent analysis...”
Get full text
Others -
3“... on the DC characteristics of an AlGaN/GaN high-electron mobility transistor (HEMT). There are two parts...”
Get full text
Others -
4“... and discussion for how to achieve low on-state voltage, high breakdown voltage and improve the reverse recovery...”
Get full text
Others -
5“... respected. Due to the importance of green energy, medium and medium-high power electronics applications have...”
Get full text
Others -
6“... conduction resistance and high breakdown voltage. We consult the device from TOSHIBA and Infineon company...”
Get full text
Others -
7“.... In the first part, it explores how to make voltage-controlled oscillator at K-band by using SiGe BiCMOS...”
Get full text
Others -
8“... supply voltage, without increase in OFF state currents. Unlike the MOSFET which uses thermal carrier...”
Get full text
Others -
9“... different device layouts were investigated to reduce the high electric field at the edge of anode...”
Get full text
Others -
10“...) can be carried out with a small operating voltage (0.5 V or less). Advantages of TFETs include...”
Get full text
Others -
11“... implemented in standard 0.25 µm CMOS high voltage technology are discussed. The different wavelength...”
Get full text
Others -
12“...碩士 === 國立中央大學 === 電機工程學系 === 106 === The electrical characteristics of AlGaN/GaN high-electron...”
Get full text
Others -
13“... easily tunnel through the source side junction and cause the high leakage current in the off-state...”
Get full text
Others -
14“... indicate devices with different cap thickness have almost the same breakdown voltages at about 700 V...”
Get full text
Others -
15“... devices operating at high currents and high voltages will cause high channel temperature and cause...”
Get full text
Others -
16“... concentration can result in high horizontal and vertical material breakdown and device breakdown voltages...”
Get full text
Others -
17“... at high reverse bias voltages, the included LC equivalent circuit provides a resonance from the avalanche...”
Get full text
Others
