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1“...碩士 === 國立交通大學 === 電子研究所 === 82 === The VRTDDB(Voltage-Ramping Time-Dependent...”
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2“... of the field emission devices, because of their high aspect ratio, small radius curvature , high chemical...”
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3“... owing to their high field-effect mobility, low power consumption¬¬, high reliability, high resolution...”
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4“... consideration of high efficiency that is mean low-amplitude voltage input signal to obtain high-amplitude...”
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5“... and applied voltage are also rapidly shrinking, which lead to lower storage capacitance while the minimum...”
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6“... and high-voltage elements of DMOS on the same chip. In order to improve breakdown voltage from less reduced...”
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7“... voltage are also rapidly shrinking, which lead to lower storage capacitance while the minimum value...”
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8“... are commonly used as low voltage, high frequency rectifiers and diodes in PC motherboard. A unique...”
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9“... on channel width of a-Si:H TFTs. However, under high gate and drain bias stress, the threshold-voltage shift...”
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10“... by the huge and bulky architecture (ex: FID, PID), risky high-voltage operation and high power consumption...”
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11“... and current programmed method, voltage programmed circuits show great potential for high resolution and low...”
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12“...-voltage and high-eurrent field emission device, a new fabrication method of lateral-type CNT diode has...”
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13“... MOSFETs. An anomalous failure, looking similar to second breakdown, in the high voltage and low current...”
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14“...-term stability of the emission current at high operating voltage can be realized. The photographs...”
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15“... array was proposed. Metal emitters with high aspect ratio can be obtained by controlling the thickness...”
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16“... dimensions is shrinking, or its use as a backup for high current and low energy applications to form...”
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17“... of field emission devices to apply on high performance devices, lower operation voltage, and higher field...”
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18“... are the high integration ability and the high breakdown voltage (BV) with a low on-resistance (Ron). The key...”
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19“... with a small diameter ranging from 20 nm to 60 nm were grown on the highly packed nanoparticles from...”
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20“... devices with three kinds of thicknesses with PECVD oxides. High breakdown voltage and high ION/IOFF ratio...”
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