Showing 1 - 20 results of 49 for search 'HIGH VOLTAGE', query time: 0.95s Refine Results
  1. 1
    by Ying-TsungChen, 陳映璁
    Published 2014
    ...博士 === 國立成功大學 === 微電子工程研究所 === 102 === In order to achieve the purpose of high performance metal...
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  2. 2
    by Jyun-De Wu, 吳俊德
    Published 2005
    ... as channel layer of High Electron Mobility Transistors (HEMTs) grown by Metal Organic Vapor Phase Epitaxy...
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  3. 3
    by Wei-ChihHuang, 黃偉志
    Published 2013
    ... on silicon and HV-LED (high voltage). Better heat dissipation than sapphire based LED, GaN on silicon based...
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  4. 4
    by Yu-YaoLin, 林予堯
    Published 2013
    ...博士 === 國立成功大學 === 光電科學與工程學系 === 101 === The different epitaxial structures of the high-brightness...
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  5. 5
    by Pai-Tyan Wang, 王派天
    Published 2006
    ... electrostatic discharge (ESD) voltage up to 7000V at the human body mode. Experimental results indicated...
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  6. 6
    by Chun-TaYu, 游俊達
    Published 2015
    ...博士 === 國立成功大學 === 微電子工程研究所 === 103 === Growth and fabrication of high efficiency GaN-based...
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  7. 7
    by Shih-MingWang, 王世銘
    Published 2010
    ... 3 μm. The depth of the groove was controlled at 150 nm by ICP etching. A high quality GaN Schottky...
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  8. 8
    by Kai-HsuanLee, 李凱璿
    Published 2010
    ... reduction and surface passivation on the performance of heterostructure high electron mobility transistors...
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  9. 9
    by Chih-JenHsiao, 蕭智仁
    Published 2017
    ... dislocations play a crucial role in the growth of the high quality Sb-based III-V material heterostructures...
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  10. 10
    by Tsung-HanYang, 楊宗翰
    Published 2013
    ... under a low operation voltage. Compared with and without high k Ga2O3 buffer layer, it was found that we...
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  11. 11
    by San-SyongShih, 施三雄
    Published 2012
    ..., threshold voltage of 1 V, subthreshold swing of 0.5 V/decade and Ion/Ioff of 105 for a-ZITO TFT with SiO2...
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  12. 12
    by Tsun-Kai Ko, 柯淙凱
    Published 2004
    ...碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 ===   In this thesis, high quality SiO2 layer...
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  13. 13
    by Pei-Wei Chien, 簡培偉
    Published 2001
    ... for Center DDCFET. The gate voltage swing (GVS) was as high as 1.5 V. Compared with modulation-doped field...
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  14. 14
    by Chieh-fei Chiu, 邱捷飛
    Published 2008
    ... the best performance. On the contrary, for high-voltage application, the 60nm-thick-ZnO MOSFET would...
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  15. 15
    by Chien-Fu Shen, 沈建賦
    Published 2008
    ...博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === Nitride based light emitting diodes with high extraction...
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  16. 16
    by Ming-HsienWu, 吳明憲
    Published 2018
    ...% showed high open-circuit voltage of 2.07 V and fill factor of 80.67% and the decrease of open-circuit...
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  17. 17
    by Wei-KangHsieh, 謝濰岡
    Published 2016
    ... in the high resistance state. Finally, the conduction mechanism turns to Ohmic conduction again in low...
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  18. 18
    by Chiu-JungChiu, 邱久容
    Published 2012
    ...-based thin film transistors (TFTs) with high k Ta2O5 gate dielectric were fabricated and analysis...
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  19. 19
    by Cheng-HuaWen, 溫承樺
    Published 2014
    ..., threshold voltage of 0V, subthreshold swing of 0.25 V/decade and Ion/Ioff ratio of 6.8×104. In addition, we...
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  20. 20
    by Yi-ShiangHsiao, 蕭亦翔
    Published 2014
    ... 13.183 cm2/Vs, threshold voltage of 0.39V, subthreshold swing of 0.28 V/decade and Ion/Ioff of 4.25×105...
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