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1“...博士 === 國立成功大學 === 微電子工程研究所 === 102 === In order to achieve the purpose of high performance metal...”
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2“... as channel layer of High Electron Mobility Transistors (HEMTs) grown by Metal Organic Vapor Phase Epitaxy...”
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3“... on silicon and HV-LED (high voltage). Better heat dissipation than sapphire based LED, GaN on silicon based...”
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4“...博士 === 國立成功大學 === 光電科學與工程學系 === 101 === The different epitaxial structures of the high-brightness...”
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5“... electrostatic discharge (ESD) voltage up to 7000V at the human body mode. Experimental results indicated...”
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6“...博士 === 國立成功大學 === 微電子工程研究所 === 103 === Growth and fabrication of high efficiency GaN-based...”
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7“... 3 μm. The depth of the groove was controlled at 150 nm by ICP etching. A high quality GaN Schottky...”
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8“... reduction and surface passivation on the performance of heterostructure high electron mobility transistors...”
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9“... dislocations play a crucial role in the growth of the high quality Sb-based III-V material heterostructures...”
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10“... under a low operation voltage. Compared with and without high k Ga2O3 buffer layer, it was found that we...”
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11“..., threshold voltage of 1 V, subthreshold swing of 0.5 V/decade and Ion/Ioff of 105 for a-ZITO TFT with SiO2...”
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12“...碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, high quality SiO2 layer...”
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13“... for Center DDCFET. The gate voltage swing (GVS) was as high as 1.5 V. Compared with modulation-doped field...”
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14“... the best performance. On the contrary, for high-voltage application, the 60nm-thick-ZnO MOSFET would...”
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15“...博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === Nitride based light emitting diodes with high extraction...”
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16“...% showed high open-circuit voltage of 2.07 V and fill factor of 80.67% and the decrease of open-circuit...”
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17“... in the high resistance state. Finally, the conduction mechanism turns to Ohmic conduction again in low...”
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18“...-based thin film transistors (TFTs) with high k Ta2O5 gate dielectric were fabricated and analysis...”
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19“..., threshold voltage of 0V, subthreshold swing of 0.25 V/decade and Ion/Ioff ratio of 6.8×104. In addition, we...”
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20“... 13.183 cm2/Vs, threshold voltage of 0.39V, subthreshold swing of 0.28 V/decade and Ion/Ioff of 4.25×105...”
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