Showing 1 - 20 results of 20 for search 'OPTOELECTRONICS', query time: 0.41s Refine Results
  1. 1
    The Study of Nitride-based Optoelectronics and Microwave Devices
    by Chun-Kai Wang, 王俊凱
    Published 2005
    “... and analyses of nitride-based optoelectronics and microwave devices. Hence, the dissertationis divided into two...”
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  2. 2
    An Investigation of Optoelectronic Devices with One-Dimensional ZnO Nanostructures
    by Shi-MingPeng, 彭士銘
    Published 2011
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  3. 3
    Growth of Self-Organized III-Nitride Nanostructures and Their Application to Optoelectronic Devices
    by Liang-Wen Ji, 姬梁文
    Published 2004
    “... and characterization of InGaN/GaN self-assembled quantum dots (SAQDs) and related optoelectronic devices (MQD LEDs...”
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  4. 4
    Investigation of Metal-Modified Zinc Oxide Nanostructure for Fabricating Optoelectronic Devices and Their Applications
    by Zi-HaoWang, 王子豪
    Published 2018
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  5. 5
    Research on Growth Mechanism of Laterally Bridged ZnO Nanostructure and their Optoelectronic Applications
    by Ming-YuehChuang, 莊明岳
    Published 2014
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  6. 6
    The Study of III-Nitride Semiconductors and Related Optoelectronic Devices Grown by Metalorganic Vapor Phase Epitaxy
    by Jia Ching, 林家慶
    Published 2008
    “... semiconductor materials and related optoelectronic devices by using metalorganic vapor phase epitaxy. First...”
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  7. 7
    Investigation of Vertical ZnO Nanorods’ Optoelectronic Devices with Aluminum Doping and Different Growth Pressures
    by Hsin-TingYeh, 葉信廷
    Published 2016
    “...碩士 === 國立成功大學 === 微電子工程研究所 === 104 === In this thesis, the optoelectronic characteristics of ZnO...”
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  8. 8
    Metal-Modified ZnO Nanostructures Grown by Low-Temperature Hydrothermal Method for Optoelectronic Device Applications
    by Chih-ChiangYang, 楊智強
    Published 2016
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  9. 9
    Investigation of Nonpolar GaN-based Epitaxial Growth and Optoelectronic Devices by Metalorganic Vapor Phase Epitaxy Technique
    by Hsiao-ChiuHsu, 徐曉秋
    Published 2011
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  10. 10
    The characteristic and application of wide bandgap semiconductor material ZnO
    by Chun-Yang Ma, 馬春陽
    Published 2005
    “... and direct bandgap is one of the most potential materials for the development of the optoelectronics...”
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  11. 11
    White organic light-emitting diode based on phosphorescence
    by Yi-Chun Chen, 陳怡君
    Published 2006
    “...-emitting diode plays an important role in optoelectronics technology and the field of display. Generally...”
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  12. 12
    MOVPE-grown InGaAsN and Device Applications
    by Shuo-Hsien Hsu, 徐碩賢
    Published 2006
    “... and their applications on optoelectronic devices have been grown by metal organic vapor phase epitaxy (MOVPE). Several...”
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  13. 13
    GaN-based high power vertical LEDs and the reflector improvement
    by Shiou-Yi Kuo, 郭修邑
    Published 2009
    “... were proposed. According to the material analysis and optoelectronic characterizations, the measured...”
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  14. 14
    Fabrication of Wafer-bonded (Al)GaInP/GaP Light Emitting Diodes
    by Jinn-Kung Sheu, 許進恭
    Published 1995
    “... semiconductor materials,with large lattice for optoelectronic integrate circuits(OEICs) using...”
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  15. 15
    Investigation of Long Wavelength GaAs-based Semiconductor Lasers Grown by MOVPE
    by Wei-Heng Lin, 林韋亨
    Published 2009
    “...-1.55μm is one of the most important optoelectronic devices in optical-fiber communication due...”
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  16. 16
    Fabrication and Analysis of InGaAsN-based Solar Cells Grown by MOVPE
    by Yu-JenWang, 王昱仁
    Published 2010
    “..., the better optoelectronic properties of near 1 eV InGaAsN epilayer lattice-matched to GaAs could be obtained...”
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  17. 17
    The Study of Nitride-Based Field Effect Transistors and Photodetectors
    by Yu-Zung Chiou, 邱裕中
    Published 2003
    “... of nitride based Optoelectronic Integrating Circuit (OEIC). Hence, the dissertation is divided into two parts...”
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  18. 18
    Investigation of Strain-Compensated GaAsSb and InGaAs Long Wavelength Lasers and Photodetectors Grown by MOVPE
    by Cheng-TienWan, 萬政典
    Published 2010
    “... optoelectronic devices for long wavelength application after properly designing. ...”
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  19. 19
    Investigation of Nonpolar GaN-based Materials and Devices
    by Sheng-HanSu, 蘇聖涵
    Published 2012
    “..., these results show great potential of a-plane GaN materials for the fabrication high performance optoelectronic...”
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  20. 20
    Investigation and Fabrication of AlGaInP and InGaN-basedLight Emitting Diodes
    by Hsin-Chuan Wang, 汪信全
    Published 2004
    “... operating current. Then we investigated the effect of blocking depth on the optoelectronic characteristics...”
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