Showing 1 - 15 results of 15 for search 'MATERIAL AND SEMICONDUCTOR DEVICES', query time: 0.91s Refine Results
  1. 1
    Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
    Subjects: “...gate material engineering...”
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    Article
  2. 2
    Research on the Factors Affecting the Growth of Large-Size Monolayer MoS<sub>2</sub> by APCVD
    “...Materials...”
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    Article
  3. 3
    Design and Investigation of the Junction-Less TFET with Ge/Si<sub>0.3</sub>Ge<sub>0.7</sub>/Si Heterojunction and Heterogeneous Gate Dielectric
    “... semiconductor material germanium to obtain the higher on-state current; the gate dielectric adjacent...”
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    Article
  4. 4
    Probing the Optical Properties of MoS<sub>2</sub> on SiO<sub>2</sub>/Si and Sapphire Substrates
    “...As an important supplementary material to graphene in the optoelectronics field, molybdenum...”
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    Article
  5. 5
    A Horizontal-Gate Monolayer MoS<sub>2</sub> Transistor Based on Image Force Barrier Reduction
    by Kun Yang, Hongxia Liu, Shulong Wang, Wei Li, Tao Han
    Published 2019-09-01
    “... of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility...”
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    Article
  6. 6
    Probing the Growth Improvement of Large-Size High Quality Monolayer MoS2 by APCVD
    “... gap of graphene in the field of nano-electronic devices, which is widely used in catalysis...”
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    Article
  7. 7
    The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor
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    Article
  8. 8
    Design and investigation of dopingless dual-gate tunneling transistor based on line tunneling
    “... to both Si and III-V materials. This design greatly promotes the application potential of DLTFET....”
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    Article
  9. 9
    The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET
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    Article
  10. 10
    A Doping-Less Tunnel Field-Effect Transistor with Si<sub>0.6</sub>Ge<sub>0.4</sub> Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance
    by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Wei Li
    Published 2019-05-01
    “...> are used as source and channel materials, respectively, to provide higher carrier mobility and smaller...”
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    Article
  11. 11
    Design and Investigation of the High Performance Doping-Less TFET with Ge/Si<sub>0.6</sub>Ge<sub>0.4</sub>/Si Heterojunction
    by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Wei Li
    Published 2019-06-01
    “... the germanium and Si<sub>0.6</sub>Ge<sub>0.4</sub> materials to get the steeper energy band, which can also...”
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    Article
  12. 12
    Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
    “... improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band...”
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    Article
  13. 13
    The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT
    “... devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gate voltage is 7 V...”
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    Article
  14. 14
    Hexagonal WO<sub>3</sub>·0.33H<sub>2</sub>O Hierarchical Microstructure with Efficient Photocatalytic Degradation Activity
    “...Structural design and morphological control of semiconductors is considered to be one of the most...”
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    Article
  15. 15
    Color‐Recognizing Si‐Based Photonic Synapse for Artificial Visual System
    “... adjustment of dangling bond defects inside the amorphous silicon (a‐Si) film, the device exhibits switchable...”
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    Article
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