Showing 1 - 16 results of 16 for search 'SEMICONDUCTOR DEVICES', query time: 0.85s Refine Results
  1. 1
    GeSn Metal-insulator-semiconductor Light-emitting Devices and GeSn Junctionless Gate-all-around pFETs
    by Chih-Chiang Chang, 張志強
    Published 2017
    “... diodes and Junctionless GAA pFETs are fabricated. Ge semiconductors have been widely used...”
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  2. 2
    Si/Ge Metal-Insulator-Semiconductor Photodetectors
    by Chu-Hsuan Lin, 林楚軒
    Published 2008
    “...博士 === 國立臺灣大學 === 電子工程學研究所 === 96 === In this dissertation, the Si/Ge metal-insulator-semiconductor...”
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  3. 3
    The characteristics and simulations of Si/SiGe`heterojunction at strained-Si devices
    by Jye-Yin Wei, 魏潔瑩
    Published 2004
    “... properties in the semiconductor material, for example by using strain in Si-based heterostructures...”
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  4. 4
    SiGe Quantum-Well/Quantum-Dot Devices and Saddle FinFETs
    by Ping-Sheng Kuo, 郭平昇
    Published 2009
    “...博士 === 國立臺灣大學 === 電子工程學研究所 === 97 === In this dissertation, the SiGe metal-insulator-semiconductor...”
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  5. 5
    Si/Ge photodetectors and solar cells
    by Wei-Shuo Ho, 何偉碩
    Published 2012
    “...”. By developing novel functions of Si/Ge based devices can add further values to semiconductor chips. Since Si/Ge...”
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  6. 6
    Schottky barrier Germanium Channel MOSFET and Temperature dependence of Nickel-Germanide Formation andStrain Induced effect on MOS Capacitor
    by Shun-Hung Huang, 黃舜鴻
    Published 2007
    “... topics of advancement of metal-oxide-semiconductor field-effect transistors technology which are Schottky...”
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  7. 7
    Germanium Channel MOSFETs and Strain-Induced effects on Silicon MOS Capacitor
    by Chih-Hung Tseng, 曾志宏
    Published 2006
    “... for advancement of metal-oxide-semiconductor field-effect transistors (MOSFETs) technology were studied, which...”
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  8. 8
    Calculation of Electron Mobility in Strained-Si/Ge Inversion Layer and Amorphous Silicon Based Thin Film Solar Cells
    by Ying-Jhe Yang, 楊英哲
    Published 2012
    “... and discussed for MOSFET (metal-oxide-semiconductor field-effect transistor) and photovoltaic technologies...”
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  9. 9
    Thin Film Germanium-on-Insulator Photodetector and Performance Enhancement
    by Cheng-Chang Hsu, 徐正璋
    Published 2007
    “... for fabricating high-quality Germaniun-on-insulator (GOI) systems and has successfully applied to many devices...”
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  10. 10
    Study of Germanium Gate-All-Around nFETs and Film BulkAcoustic Wave Resonator
    by Yu-Cheng Shen, 沈育誠
    Published 2017
    “...碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In the past 40 years, the semiconductor industry follows...”
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  11. 11
    Heterojunction Effect on Ge Quantum Well pFETs and the SiGe Optoelectronics
    by Wen-Yuan Chen, 陳文園
    Published 2007
    “... well can have the critical influence on device characteristics. The Si-cap can be served as a...”
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  12. 12
    A Comprehensive Study of Charge Pumping Technique in Polycrystalline Silicon Thin Film Transistors and Germanium n-MOSFETs
    by Ting-Yun Wu, 吳亭昀
    Published 2010
    “... and mobility. With the continued scaling of modern complementary metal-oxide-semiconductor field-effect...”
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  13. 13
    Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors and the Strain Response of High Mobility Ge n-MOSFETs
    by William Hsu, 徐正一
    Published 2010
    “... of using Ge and Schottky-barrier S/D are addressed by making comparison between Ge and Si devices...”
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  14. 14
    Fabrication and Characterizations of High Mobility Ge n-MOSFETs
    by Jing-Yi Lin, 林京毅
    Published 2012
    “...碩士 === 國立臺灣大學 === 電子工程學研究所 === 100 === Recently, semiconductor industry technology has followed...”
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  15. 15
    Simulation Study of Vertical Pillar Transistor and Ge Gate-All- Around FET
    by Yu-Chun Yin, 尹昱鈞
    Published 2012
    “... SiGe layer at bottom source/drain. With aggressive device scaling, junctionless transistor can...”
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  16. 16
    First-principles Study of Ge/GeO2 Interface and Bulk GeO2 and Calculation of Electron Mobility in SiGe FinFETs
    by Shang-Chun Lu, 呂尚濬
    Published 2013
    “... high mobility materials to channel of metal-oxide-semiconductor field-effect transistors (MOSFETs...”
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