“... efficiency. The III-Nitride semiconductor materials, which consist of InN, AlN, GaN, and their alloys, have a...”
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“... important for electronics devices based on a new trend of electronic developments. Metal-Oxide-Semiconductor...”
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“... for In0.53Ga0.47As MOS devices. It includes in the fabrication of metal alloys acted as a gate electrode...”
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“... on the InAlGaN barrier layer growth on sapphire substrates by metal organic chemical vapor deposition (MOCVD...”
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“... catalyst free vertical InAs, InGaAs and InSb nanowires on silicon substrate by metal organic chemical vapor...”
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“... provided insight into the role of alloy scattering on 2DEG properties. Secondly, for the sake of achieving...”
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