Showing 1 - 13 results of 13 for search 'SEMICONDUCTOR DEVICES', query time: 0.48s Refine Results
  1. 1
    Fabrication and Characterization of GaN-based Semiconductor Devices for High-Power and Microwave Power Applications
    by Wang, Huan-Chung, 王煥中
    Published 2018
    “...博士 === 國立交通大學 === 材料科學與工程學系所 === 107 === Gallium nitride-based metal–insulator–semiconductor high...”
    Get full text
    Others
  2. 2
    Fabrication and Characterization of GaN-based Semiconductor Devices on Si Substrates for High-Power Electronic Applications
    by Hsieh, Ting-En, 謝廷恩
    Published 2015
    “... device applications owing to the high current, high breakdown, and low fabrication cost. This thesis...”
    Get full text
    Others
  3. 3
    SiC Backside Via Process for GaN RF Power Device Application
    by Chiu, Yi-Ju, 邱奕儒
    Published 2015
    “... attentions in semiconductor industry. Its excellent properties, such as wide bandgap, high electron mobility...”
    Get full text
    Others
  4. 4
    Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
    by Yang, Li-Yng, 楊岦穎
    Published 2018
    “... lot of research attentions in semiconductor industry. Owing to high current, high breakdown and low...”
    Get full text
    Others
  5. 5
    Study of Tri-Gate InAs HEMTs for Low-Power Logic Applications
    by Hsu, Hisang-Hua, 許祥華
    Published 2015
    “... gates have already been the trend of semiconductor industry. Many researches still focus on reducing...”
    Get full text
    Others
  6. 6
    The Study of Damage-free Gate-recessed Normally-off GaN MISHEMTs by Neutral Beam Etching System
    by Lee, Ruey-Bor, 李瑞博
    Published 2017
    “...碩士 === 國立交通大學 === 光電系統研究所 === 105 === GaN-based devices are attractive candidates for high-power...”
    Get full text
    Others
  7. 7
    The Study of High Current Density GaN MIS-HEMT with SiO2 Gate Insulator
    by Hsu, Chia-Chieh, 許嘉傑
    Published 2018
    “...-insulator-semiconductor (M-I-S) gate structures has shown marked improvements in reducing gate leakage...”
    Get full text
    Others
  8. 8
    The Study of La2O3/SiO2 GaN MIS-HEMT for High Power Application
    by Lin, Tai-Wei, 林岱葦
    Published 2015
    “..., comparing with other electron device. It is more suitable for high power application. However...”
    Get full text
    Others
  9. 9
    Study of π-gate InAs HEMT for Logic Application
    by Wang, Ying-Chieh, 王穎捷
    Published 2018
    “... gates have already been the trend of semiconductor industry. Many researches still focus on reducing...”
    Get full text
    Others
  10. 10
    PASSIVATION OF HIGH-K/III-V INTERFACES FOR POST CMOS APPLICATION
    by Luc, Quang-Ho, 陸廣湖
    Published 2015
    “... semiconductor (CMOS) downsizing has long been hindered by the unexpected interface quality between the high-k...”
    Get full text
    Others
  11. 11
    The Study of Using AlN/Al2O3 Dielectric with Plasma Enhanced Atomic Layer Deposition to Improve MoS2 MOSFET Performance
    by Hu, Chih Hsuan, 胡芷瑄
    Published 2018
    “...-body (UTB) semiconductor of MoS2 can sufficiently increase gate-to-channel control and reduce current...”
    Get full text
    Others
  12. 12
    The Study of AlGaN/GaN High Electron Mobility Transistors for High Frequency and High Power Applications
    by Lu, Chung-Yu, 呂宗育
    Published 2010
    “... contacts have been extensively re-examined and new approaches are proposed. The effect of the device layout...”
    Get full text
    Others
  13. 13
    Study on Negative Capacitance InGaAs MOSFETs for Sub-20 mV/dec Subthreshold Swing
    “...碩士 === 國立交通大學 === 光電系統研究所 === 106 === The complementary metal oxide semiconductor (CMOS) technology...”
    Get full text
    Others
Search Tools: Get RSS Feed — Email this Search