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1“... degradation under a high voltage or a high current stressing. Recently, due to the popularly used for SiGe...”
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2“... is found to be more vulnerable to CHE and SHE stress, resulting in enhanced threshold voltage shift...”
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3“... thin-film transistors (TFTs) with low-high-low band gap structures have been investigated. The various...”
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4“... mechanism of high voltage stressing and the channel thickness effect on device characteristics for the deep...”
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5“... roll-off and obvious kink effect under high drain voltage is due to the impact ionization at drain side...”
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6“.... In the ring structure, the second peaks in a capacitance-voltage curve have been observed at high drain...”
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7by 陳弘斌“... larger electric-field in the corner region at the same voltage. The Twin-TFT with multiple nanowire...”
Published 2008
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8“... is as high as 36�媴/cm2, and the coercive field (2EC) is 99.9kV/cm at an applied voltage of 2 V...”
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9“...-voltage characteristics of devices were measured using HP4156A semiconductor parameter analyzer. The low...”
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10“... of poly-Si TFTs. The SiGe spacer was selectively grown in ultra-high vacuum chemical vapor deposition...”
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11“... characteristics such as mobility, threshold voltage, and subthreshold swing are found to improve dramatically...”
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12“... region with ultra-thin gate oxide, we have problems of poly gate depletion and high gate resistance...”
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13by Chiung-Wei Lin, 林炯暐“...碩士 === 國立交通大學 === 電子研究所 === 81 === Thin film transistor with high performance at low...”
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14“... the thermal stability of the flat-band voltage and equivalent oxide thickness. Using the same process...”
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15“... injection stress shows independent of the doping concentration. The difference of Qbd between high and low...”
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16“... temperature instability (PBTI) trapping/de-trapping reliability issues for devices using Hf-based high-k...”
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17by 周美芬“... the design goals of low power consumption and wide operating bandwidth. In addition, a highly integratable...”
Published 2005
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18“... has been reported to be responsible for the high threshold voltages of FUSI gated devices...”
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