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1Fabrication and Characteristics of Tip-Free Core-Shell InGaN/GaN Nanorod Green Light Emitting Diodes“... the polarization-induced effect. In the epitaxial process of the GaN materials in LEDs, the growth rate of multi...”
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2“... control the growth surface, geometric shape, and material composition distribution of 3D devices...”
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3“...博士 === 國立交通大學 === 光電工程研究所 === 105 === Recently, GaAs- and GaN-based materials had shown its...”
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4Investigation and Improvement of Performance in GaN-based Optoelectronic and Microelectronic Devices“... extraction In the fourth part, the design and fabrication of GaN-based VCSELs with a composition-graded...”
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5“... by indium composition fluctuation. Other than material issues, how to let more sunlight into cell...”
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6“... colloidal NQDs, flexible, low-cost, large-area, and easy-processed fabrications for optoelectronic devices...”
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