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1“... to the production of large screen displays and facilitates mass-production. a-Si:H has high photoconductivity which...”
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2“...碩士 === 國立中山大學 === 物理學系研究所 === 93 === In this thesis, high density plasma chemical vapor deposition...”
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3“... analysis on Silicon-on-Insulator (SOI) and high-K/metal gate MOSFETs. For the part of bias temperature...”
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4“... under high electric field due to drain voltage. However, our experimental data indicate that S.S. has...”
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5“... voltage (Vth) than single-channel TFTs. Furthermore, the experimental results reveal that combining...”
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6“... investigate the post treatment of low-temperature-deposited high dielectric constant (high-k) thin films...”
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7“...博士 === 國立中山大學 === 物理學系研究所 === 103 === In recent years, along with the evolution of high-tech...”
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8“... technologies such as high-resolution large-screen LCD and AMOLED. Oxide semiconductor thin film transistors...”
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9“... power consumption and high operational performance, but in order to avoid its sneak current and over...”
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10“... film transistor (poly-Si TFT) has been investigated at room temperature under dynamic voltage stress...”
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11“..., it was observed that the degradation of threshold-voltage (Vth) was closely associated with the stress frequency...”
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12“... is, in particular, a serious problem in the multimedia displays that require high intensity backlight illumination...”
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13“... time and small operation voltage. Among numerous memory devices with nanocrystals, the memory device...”
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14“... stress, properties exhibit an obvious negative threshold voltage shift and a significant degradation...”
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15“... current and threshold voltage degraded under outward bending. This is because outward bending will induce...”
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16“... such as low operation voltage, fast operation speed, non-destructive read, simple metal-insulator-metal (MIM...”
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17“... the operation voltage and speed of memory can not be improved. These drawbacks will restrict the development...”
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18“... (60 up inches), high resolution potable electronic device and non-glass 3-D display. These new...”
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19“... and below. Roughly, we divide the thesis into two parts, strained-silicon channel engineering and high-k...”
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20“... components, such as RF, high voltage components, CMOS image sensor, etc. In this section we will discuss...”
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