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1“... at moderate electric field, and Frenkel-Poole conduction at high electric field. The lowest parabolic voltage...”
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2by 李勃學“...碩士 === 國立交通大學 === 電子研究所 === 98 === In this thesis, EUV radiation damage on high dielectric constant...”
Published 2010
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3“... by solid phase epitaxy (SPE) annealing, silicon-carbon (SiC) layer with high concentration...”
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4“... blocking voltage and high thermal conductivity. This is suitable for the applications of high voltage power...”
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5“..., and good thermal conductivity. For high breakdown voltage device, the quality of the n- epi-layers is very...”
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6“... Si to implement high-voltage and high current power device operating at high temperature. Among those...”
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7“... is observed at high erase voltage operation because the blocking layer is damaged by EUV irradiation...”
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8“... and n-type Ge is very high due to the high Schottky barrier height. To implement high performance Ge...”
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9“... is suitable for high power and high temperature application due to its wide bandgap, high breakdown electric...”
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10“... results, the modulation of the threshold voltage (Vt) and the modulation of the Gate-Induced-Drain-Leakage...”
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11“... semiconductors as the starting material can raise the blocking voltage rating and reduce the power loss during...”
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12“.... In this study, EUV irradiation damage effects on the metal gate/high dielectric constant (high-k) dielectric...”
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13“... performance will encounter difficulty due to physical limitation. Therefore, high mobility materials and novel...”
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14“... of device performance between high on-state current and high on/off ratio. One extreme case is devices...”
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15“... and good high-voltage capability. In this dissertation, several processes in fabricating a 4H-SiC trench...”
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16“...碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Silicon carbide (SiC) is suitable for fabricating high...”
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17“...碩士 === 國立交通大學 === 電子研究所 === 100 === Silicon carbide (SiC) is suitable for fabricating high power...”
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18“... on the thermal stability and junction properties of nickel monosilicide (NiSi), I proposed high-dosage germanium...”
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19“... scaling. Contact resistance is highly dependent on the Schottky barrier height (SBH) and the substrate...”
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