Showing 1 - 19 results of 19 for search 'HIGH VOLTAGE', query time: 1.32s Refine Results
  1. 1
    by Huang, Yun-Pei, 黃勻珮
    Published 2009
    ... at moderate electric field, and Frenkel-Poole conduction at high electric field. The lowest parabolic voltage...
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  2. 2
    by 李勃學
    Published 2010
    ...碩士 === 國立交通大學 === 電子研究所 === 98 === In this thesis, EUV radiation damage on high dielectric constant...
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  3. 3
    by Lee, Chen-Ming, 李振銘
    Published 2011
    ... by solid phase epitaxy (SPE) annealing, silicon-carbon (SiC) layer with high concentration...
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  4. 4
    by Yen, Hao-Hsiang, 顏皓祥
    Published 2019
    ... blocking voltage and high thermal conductivity. This is suitable for the applications of high voltage power...
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  5. 5
    by Lien, Chong-De, 連崇德
    Published 2013
    ..., and good thermal conductivity. For high breakdown voltage device, the quality of the n- epi-layers is very...
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  6. 6
    by Yu, Chia-Jung, 游嘉榕
    Published 2018
    ... Si to implement high-voltage and high current power device operating at high temperature. Among those...
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  7. 7
    by Yen, Chih-Chan, 顏志展
    Published 2010
    ... is observed at high erase voltage operation because the blocking layer is damaged by EUV irradiation...
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  8. 8
    by Kao, Ming-Hong, 高銘鴻
    Published 2012
    ... and n-type Ge is very high due to the high Schottky barrier height. To implement high performance Ge...
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  9. 9
    by Yang, Hsin-Han, 楊昕翰
    Published 2014
    ... is suitable for high power and high temperature application due to its wide bandgap, high breakdown electric...
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  10. 10
    by Yu, Kun-Wu, 余昆武
    Published 2009
    ... results, the modulation of the threshold voltage (Vt) and the modulation of the Gate-Induced-Drain-Leakage...
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  11. 11
    by Cheng, Jung-Chien, 鄭嶸健
    Published 2018
    ... semiconductors as the starting material can raise the blocking voltage rating and reduce the power loss during...
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  12. 12
    by Sung, Ming-Hung, 孫銘鴻
    Published 2012
    .... In this study, EUV irradiation damage effects on the metal gate/high dielectric constant (high-k) dielectric...
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  13. 13
    by Chou, Hung-Ju, 周鴻儒
    Published 2015
    ... performance will encounter difficulty due to physical limitation. Therefore, high mobility materials and novel...
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  14. 14
    by Chen, Ting-Yeh, 陳定業
    Published 2011
    ... of device performance between high on-state current and high on/off ratio. One extreme case is devices...
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  15. 15
    by Tseng, Yuan-Hung, 曾元宏
    Published 2017
    ... and good high-voltage capability. In this dissertation, several processes in fabricating a 4H-SiC trench...
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  16. 16
    by Wang, Kuo-Cheng, 王國丞
    Published 2013
    ...碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Silicon carbide (SiC) is suitable for fabricating high...
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  17. 17
    by Marvin-Ueng, 翁茂元
    Published 2012
    ...碩士 === 國立交通大學 === 電子研究所 === 100 === Silicon carbide (SiC) is suitable for fabricating high power...
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  18. 18
    by Hsieh, Chih-Ming, 謝志民
    Published 2009
    ... on the thermal stability and junction properties of nickel monosilicide (NiSi), I proposed high-dosage germanium...
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  19. 19
    by Fu, Tz-Yu, 傅子瑜
    Published 2013
    ... scaling. Contact resistance is highly dependent on the Schottky barrier height (SBH) and the substrate...
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