-
1“... confinement effect in the DHEBT leaded to a small offset voltage of 0.1V and a...”
Get full text
Others -
2“... channel structure, all devices proposed in this work reveal high-breakdown voltage, low leakage current...”
Get full text
Others -
3by Ching-Wen Hung, 洪慶文“...博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this dissertation, a series of high-performance...”
Get full text
Others -
4“...-barrier height. Therefore, the low leakage current, high breakdown voltage, low output conductance...”
Get full text
Others -
5“... doped p+-GaInP layer is introduced to enhance high gate turn-on and breakdown voltage and reduce...”
Get full text
Others -
6“... on the studied PAI and Si ion-mixing techniques, high-performance 0.2μm CMOS devices are fabricated successfully...”
Get full text
Others -
7“...碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this thesis, InAlAs/InGaAs/GaAs metamorphic high...”
Get full text
Others -
8“... and large logic swing noise margin. We can moldulate the gate voltage swing range by gr...”
Get full text
Others -
9“...As metamorphic high electron mobility transistors (MHEMTs) grown by molecular beam epitaxy (MBE) system have been...”
Get full text
Others -
10“... leakage current, high breakdown voltage, low output conductance, and high DC gain ratio at room...”
Get full text
Others -
11“... leakage current, high breakdown voltage, low output conductance, and high DC gain ratio at room...”
Get full text
Others -
12“... leakage current and high breakdown voltage. For a 1 μm gate length device, two-terminal gate-drain...”
Get full text
Others -
13“...-signal current gain are as high as 85 and 120, respectively. In addition, the offset voltage as low...”
Get full text
Others -
14“.../InGaAs HBTs suffer the drawbacks of high output conductance and low breakdown voltage due to the small...”
Get full text
Others -
15“... heterojunction such as the large offset voltage. Furthermore, to avoid poor quality related to high aluminum...”
Get full text
Others -
16“... can be summarized as (1) reduction of the collector-emitter offset voltage DVCE, (2) insensitivity...”
Get full text
Others -
17“... and superlattice-emitter heterostructure bipolar transistors. These novel structures included low-offset voltage...”
Get full text
Others -
18“..., but the breakdown voltage is only 2V. The breakdown voltage and output conductance are improved in the DHBTs...”
Get full text
Others -
19“.... The characteristics of a new and improved borderless contact (BLC) are studied. A low-temperature and high deposition...”
Get full text
Others -
20“... by sulfur passivation. As a result, high breakdown voltage, low leakage current, and good frequency response...”
Get full text
Others
