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81“...-semiconductor (MOS) devices. With respect to the formation of stress-induced traps in gate oxide, dc stress...”
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82
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83by Wei, Daming“... at the oxide-semiconductor interface must be suppressed to maintain the high electron mobility of the device...”
Published 2014
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84“...博士 === 國立臺灣大學 === 化學工程學研究所 === 104 === Recently, organic-based memory devices have received...”
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85“... to nanometer size to boost device performance and integration. Accompanied mobility degradations are too...”
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86by Haddad, HomayoonSubjects: “...Metal oxide semiconductor field-effect transistors...”
Published 2013
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87by Kropewnicki, Thomas JosephSubjects: “...Optoelectronic devices...”
Published 2006
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88by Choudhury, Palash RoySubjects: “...Gallium Arsenide Semiconductors...”
Published 2007
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89
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90
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91“...博士 === 國立交通大學 === 材料科學與工程學系所 === 107 === Gallium nitride-based metal–insulator–semiconductor high...”
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92“... of device on-resistance (RON) extraction with synchronized current-voltage characteristics under...”
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93
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94“... and low density to achieve the high performance memory device by using the CVD system. Therefore, the Ge...”
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95“...博士 === 國立交通大學 === 材料科學與工程學系 === 99 === GaN-based semiconductors are promising candidates for RF...”
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96
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97“...博士 === 國立臺灣大學 === 電子工程學研究所 === 102 === With the aggressive downscaling of MOS devices...”
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98“... model of semiconductor devices is proposed. This new formulation leads to symmetric and monotonic...”
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99“... semiconductor materials and related optoelectronic devices by using metalorganic vapor phase epitaxy. First...”
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100“... also utilized such a low temperature technique to fabricate the related semiconductor devices...”
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