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Aluminum nitride
III-V semiconductors
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Performance
2D-hexagonal
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Aluminum alloys
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Atomic layer deposition
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Boron nitride
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CMOS fabrication
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Cobalt alloys
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Elastic softening
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Fabrication layers
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First principle method
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Gate dielectrics
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Hafnium oxides
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High resolution transmission electron microscopy
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Layered semiconductors
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Nitride growth
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Scandium alloys
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State of the art
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1by Chang, S.-J, Chien, C.-H, Chih, J.H, Hu, C., Huang, Y.-C, Lai, Y.-T, Lin, J.-M, Tang, Y.-T, Tsai, Y.-W, Wang, S.-YSubjects: “...Device performance...”
Published 2022
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