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Time-resolved photoluminescence
4H SiC
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4h SiC
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Carrier lifetime
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Deep level transient spectroscopy
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Deep levels transient spectroscopy
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Defects
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Energy
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Epilayers
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Epitaxial growth
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Gallium nitride
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High pressure spectroscopy
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Hydrostatic pressure
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III-V semiconductors
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Longitudinal optical phonon plasmon
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Longitudinal optical phonon plasmon coupling
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Multiquantum-well (MQW)
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Neutron detection
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Non-polar
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Optical properties
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Phonon-plasmon coupling
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Photoluminescence
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Piezoelectricity
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Polar structures
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Pressure dependent
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Radiative recombination
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S shape
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Semiconductor quantum wells
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Silicon carbide
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1by Kaminska, A., Korona, K.P, Koronski, K., Krukowski, S., Kryvyi, S., Monroy, E., Sobczak, K., Strak, P., Wierzbicka, A.View Fulltext in Publisher
Published 2022
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