Showing 1 - 7 results of 7 for search '"IEEE Journal of the Electron Devices Society"', query time: 0.93s Refine Results
  1. 1
    Tunnel Field-Effect Transistor With Segmented Channel
    by Jaesoo Park, Changhwan Shin
    Published 2019-01-01
    “...IEEE Journal of the Electron Devices Society...”
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    Article
  2. 2
    Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System
    “...IEEE Journal of the Electron Devices Society...”
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    Article
  3. 3
    Energy-Delay Sensitivity Analysis of a Nanoelectromechanical Relay With the Negative Capacitance of a Ferroelectric Capacitor
    by Chankeun Yoon, Gihun Choe, Changhwan Shin
    Published 2020-01-01
    “...IEEE Journal of the Electron Devices Society...”
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    Article
  4. 4
    NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity
    by Yuri Hong, Yejoo Choi, Changhwan Shin
    Published 2020-01-01
    “...IEEE Journal of the Electron Devices Society...”
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    Article
  5. 5
    External Resistor-Free Gate Configuration Phase Transition FDSOI MOSFET
    by Jaemin Shin, Changhwan Shin
    Published 2019-01-01
    “...IEEE Journal of the Electron Devices Society...”
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    Article
  6. 6
    Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
    “...IEEE Journal of the Electron Devices Society...”
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    Article
  7. 7
    Transient Response of Negative Capacitance in P(VDF<sub>0.75</sub>-TrFE<sub>0.25</sub>) Organic Ferroelectric Capacitor
    by Hansol Ku, Changhwan Shin
    Published 2017-01-01
    “...IEEE Journal of the Electron Devices Society...”
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    Article
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