Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

by Alexana Roshko, Matt Brubaker, Paul Blanchard, Todd Harvey, Kris A. Bertness
Published 2018-09-01

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

by Viktor Shamakhov, Dmitriy Nikolaev, Sergey Slipchenko, Evgenii Fomin, Alexander Smirnov, Ilya Eliseyev, Nikita Pikhtin, Peter Kop`ev
Published 2021-12-01

Efficient Carrier Recombination in InGaN Pyramidal <i>µ</i>-LEDs Obtained through Selective Area Growth

by Jie’an Jiang, Houqiang Xu, Li Chen, Long Yan, Jason Hoo, Shiping Guo, Yuheng Zeng, Wei Guo, Jichun Ye
Published 2021-05-01

High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

by Elena Alexandra Serban, Aditya Prabaswara, Justinas Palisaitis, Per Ola Åke Persson, Lars Hultman, Jens Birch, Ching-Lien Hsiao
Published 2020-07-01

Diffusion-Driven Charge Transport in Light Emitting Devices

by Iurii Kim, Pyry Kivisaari, Jani Oksanen, Sami Suihkonen
Published 2017-12-01

Croissance de GaN semipolaire par épitaxie en phase vapeur aux organométalliques sur substrats de Si structurés

by El Khoury Maroun, Michel
Published 2016

Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source

by Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Takuma Yasuda, Shunsuke Ohkouchi, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, Edmund Clarke, Richard A. Hogg
Published 2014-09-01

Low Chirp EMLs Fabricated By Combining SAG and Double Stack Active Layer Techniques

by Qiufang Deng, Hongliang Zhu, Xiao Xie, Lu Guo, Siwei Sun, Song Liang, Wei Wang
Published 2018-01-01

Polar-Plane-Free Faceted InGaN-LEDs toward Highly Radiative Polychromatic Emitters

by Matsuda, Yoshinobu
Published 2020

Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices

by Michał Stępniak, Mateusz Wośko, Joanna Prażmowska-Czajka, Andrzej Stafiniak, Dariusz Przybylski, Regina Paszkiewicz
Published 2020-12-01

Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy

by Goh, Wui Hean
Published 2013

Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth

by Tomonori Ito, Toru Akiyama
Published 2017-02-01

Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques

by Laval, Gautier
Published 2017

Composants photoniques à base de fils de nitrures d'élément III : du fil unique aux assemblées

by Messanvi, Agnès
Published 2015

Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells

by Chen, Hsin-Yu
Published 2018

High-Performance GaN Vertical <italic>p-i-n</italic> Diodes via Silicon Nitride Shadowed Selective-Area Growth and Optimized FGR- and JTE-Based Edge Termination

by Palash Sarker, Frank P. Kelly, Matthew Landi, Riley E. Vesto, Kyekyoon Kim
Published 2021-01-01

Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy

by Urban, Arne
Published 2013

Development of InGaN/GaN nanostructures

by Oppo, Carla Ivana
Published 2017

Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE)

by Avit, Geoffrey
Published 2014

Selected-area growth of nickel micropillars on aluminum thin films by electroless plating for applications in microbolometers

by Do Ngoc Hieu, Dang Nguyen Ha My, Vu Thi Thu, Nguyen Quoc Hung, Do Ngoc Chung, Nguyen-Tran Thuat
Published 2017-06-01