“... performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power...”
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“... (p. 147-153). === The deployment of GaN high electron mobility transistors (HEMT) in RF power...”
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“... performance is threated by their fundamental physical limits. With silicon approaching these limits, MOSFETs...”
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“... that accounts for the device dynamics and that is electron trapping/detrapping in pre-existing oxide traps...”
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“...This electronic version was submitted by the student author. The certified thesis is available...”
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“... to this device concept is to engineer the density of states of electrons at the source via a superlattice. We...”
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