Subjects: “...Transistors à électron à haute mobilité (HEMT)...”
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“... fundamental notions associated to MOS devices and technologies, and provides an analysis of parasitic effects...”
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“... Devices), toutes deux développées par ST Microelectronics. Cette architecture offre en plus la possibilité...”
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“.... , by incorporating gold nanoparticles in these devices, we have developed a new device called “NOMFETs...”
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“... …). === This PhD work consisted in a theoretical and experimental study of Al(In, Ga)N/GaN HEMTs (High Electron...”
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“... control of mechanical properties of the device. ln this work, we use an original experimental technique...”
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“... on human health, environment and its radiative forcing on climate. Gaining fundamental understanding...”
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“... après détection. === While the rapid proliferation of mobile devices along with the tremendous growth...”
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“... of this subject so meaningful from both the fundamental and applied (e.g. industrial processes) point of view...”
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“... the point of view of fundamental research and technological applications. Furthermore, new nitrides...”
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