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1“... primary reliability issue in CMOS integrated circuit (IC) products. With more and more complicated design...”
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2“... and many integrated circuits (ICs) of electrical products fabricated in a high-voltage (HV) process...”
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3“... serious issue. When transistors are fabricated with gate oxide of only a few nanometers thick, the gate...”
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4“...-frequency integrated circuits (RF ICs) have been fabricated in CMOS processes. Electrostatic discharge (ESD...”
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5“... protection design in chapter 6 is for ICs with a voltage programming (VPP) pin. When programming read only...”
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6“... are applied in the high-voltage (HV) environment (as for the Power IC design like the AC-DC and DC-DC...”
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7“.... Usually, there is an offset problem in CMOS analog or mixed-signal IC design. In this thesis, a method...”
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8“.... ESD protection design is therefore necessary to protect ICs from being damaged by ESD stress energies...”
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9“.... ESD protection design is therefore necessary to protect ICs from being damaged by ESD stress energies...”
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10“.... With the development of SoC applications, the high-voltage CMOS technology is widely adapt in the ICs fabrication...”
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11“... correlated approaches of bond pad designs of wire bond IC products proposed for reliability improvement...”
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12“..., radio-frequency integrated circuits (RF ICs) have been fabricated in nanoscale CMOS processes...”
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13“... into consideration during the design phase of all IC products. In order to prevent the ESD failures and damages in IC...”
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14“..., the fabricated cost per unit area of the IC is dramatically increased with the continuously scaled-down CMOS...”
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15“... for high-voltage IC products. In this dissertation, the ESD design constraints in nanoscale CMOS process...”
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16“..., the devices in the integrated circuits (ICs) have been fabricated with ultra-thin gate oxide thickness...”
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17“... in the integrated circuits (ICs) have been fabricated with very thin gate oxide to achieve high-speed and low- power...”
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18“... be taken into consideration during the design phase of all IC products. All pads which connect the IC...”
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19“... current. The proposed ESD protection design for high-power T/R switch has been fabricated in a 0.18-µm...”
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20“... (HV) applications. ESD may occur accidentally during the fabrication, package, and assembling...”
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