Showing 1 - 20 results of 22 for search 'IC DESIGN AND FABRICATION', query time: 0.72s Refine Results
  1. 1
    by Yen, Cheng-Cheng, 顏承正
    Published 2009
    ... primary reliability issue in CMOS integrated circuit (IC) products. With more and more complicated design...
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  2. 2
    by Huang, Yi-Jie, 黃義傑
    Published 2015
    ... and many integrated circuits (ICs) of electrical products fabricated in a high-voltage (HV) process...
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  3. 3
    ... serious issue. When transistors are fabricated with gate oxide of only a few nanometers thick, the gate...
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  4. 4
    by Tsai, Shiang-Yu, 蔡翔宇
    Published 2012
    ...-frequency integrated circuits (RF ICs) have been fabricated in CMOS processes. Electrostatic discharge (ESD...
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  5. 5
    by Chen, Wen-Yi, 陳穩義
    Published 2011
    ... protection design in chapter 6 is for ICs with a voltage programming (VPP) pin. When programming read only...
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  6. 6
    by Tsai, Hui-Wen, 蔡惠雯
    Published 2015
    ... are applied in the high-voltage (HV) environment (as for the Power IC design like the AC-DC and DC-DC...
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  7. 7
    by Chien, Ming-Cheng, 簡銘成
    Published 2001
    .... Usually, there is an offset problem in CMOS analog or mixed-signal IC design. In this thesis, a method...
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  8. 8
    by Dai, Chia-Tsen, 戴嘉岑
    Published 2017
    .... ESD protection design is therefore necessary to protect ICs from being damaged by ESD stress energies...
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  9. 9
    by Dai, Chia-Tsen, 戴嘉岑
    Published 2012
    .... ESD protection design is therefore necessary to protect ICs from being damaged by ESD stress energies...
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  10. 10
    by Chiu, Po-Yen, 邱柏硯
    Published 2013
    .... With the development of SoC applications, the high-voltage CMOS technology is widely adapt in the ICs fabrication...
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  11. 11
    by Peng, Jeng-Jie, 彭政傑
    Published 2002
    ... correlated approaches of bond pad designs of wire bond IC products proposed for reliability improvement...
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  12. 12
    by Fan, Mei-Lian, 范美蓮
    Published 2014
    ..., radio-frequency integrated circuits (RF ICs) have been fabricated in nanoscale CMOS processes...
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  13. 13
    by Chen, Shih-Hung, 陳世宏
    Published 2009
    ... into consideration during the design phase of all IC products. In order to prevent the ESD failures and damages in IC...
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  14. 14
    by Yeh, Chih-Ting, 葉致廷
    Published 2013
    ..., the fabricated cost per unit area of the IC is dramatically increased with the continuously scaled-down CMOS...
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  15. 15
    by Wang, Chang-Tzu, 王暢資
    Published 2010
    ... for high-voltage IC products. In this dissertation, the ESD design constraints in nanoscale CMOS process...
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  16. 16
    by Chang, Pin-Hsin, 張品歆
    Published 2014
    ..., the devices in the integrated circuits (ICs) have been fabricated with ultra-thin gate oxide thickness...
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  17. 17
    by Chang, Tang-Long, 張堂龍
    Published 2010
    ... in the integrated circuits (ICs) have been fabricated with very thin gate oxide to achieve high-speed and low- power...
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  18. 18
    by Lin, Chun-Yu, 林群祐
    Published 2009
    ... be taken into consideration during the design phase of all IC products. All pads which connect the IC...
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  19. 19
    by Hung, Tao-Yi, 洪道一
    Published 2017
    ... current. The proposed ESD protection design for high-power T/R switch has been fabricated in a 0.18-µm...
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  20. 20
    by Liao, Seian-Feng, 廖顯峰
    Published 2015
    ... (HV) applications. ESD may occur accidentally during the fabrication, package, and assembling...
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