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1by Shuang Liu, Xiufeng Song, Jincheng Zhang, Shenglei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao“...In this work, device parameters for GaN vertical trench MOSFETs have been investigated...”
Published 2020-01-01
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3by Zhe Li, Yu Xu, Jiaqi Zhang, Yaolin Cheng, Dazheng Chen, Qian Feng, Shengrui Xu, Yachao Zhang, Jincheng Zhang, Yue Hao, Chunfu ZhangSubjects: “...flexible device...”
Published 2019-01-01
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5by Fengqin He, Hailong You, Xueyi Li, Dazheng Chen, Shangzheng Pang, Weidong Zhu, He Xi, Jincheng Zhang, Chunfu Zhang“...Materials...”
Published 2020-05-01
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6by Ying Zhao, Shengrui Xu, Hongchang Tao, Yachao Zhang, Chunfu Zhang, Lansheng Feng, Ruoshi Peng, Xiaomeng Fan, Jinjuan Du, Jincheng Zhang, Yue Hao“...Materials...”
Published 2021-12-01
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7by Haiyong Wang, Wei Mao, Shenglei Zhao, Ming Du, Yachao Zhang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao“...IEEE Journal of the Electron Devices Society...”
Published 2021-01-01
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8by Yanni Zhang, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Hepeng Zhang, Shengrui Xu, Zhihong Liu, Hong Zhou, Yue Hao“...IEEE Journal of the Electron Devices Society...”
Published 2020-01-01
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9by Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao“...IEEE Journal of the Electron Devices Society...”
Published 2018-01-01
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10by Haifeng Yang, Jincheng Zhang, Chunfu Zhang, Jingjing Chang, Zhenhua Lin, Dazheng Chen, He Xi, Yue Hao“...Materials...”
Published 2017-07-01
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11by Jiuren Zhou, Yue Peng, Genquan Han, Qinglong Li, Yan Liu, Jincheng Zhang, Min Liao, Qing-Qing Sun, David Wei Zhang, Yichun Zhou, Yue Hao“...IEEE Journal of the Electron Devices Society...”
Published 2018-01-01
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12by Weihang Zhang, Liyu Fu, Xi Liu, Jincheng Zhang, Shenglei Zhao, Zhizhe Wang, Yue Hao“...IEEE Journal of the Electron Devices Society...”
Published 2021-01-01
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13by Jie Su, Junjing Zhang, Rui Guo, Zhenhua Lin, Mengyu Liu, Jincheng Zhang, Jingjing Chang, Yue Hao“...Materials & Design...”
Published 2019-12-01
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14“... for InSe FET and comprehensively evaluated its performance from views of material and device based on ab...”
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16by Yu Zeng, Jing Ning, Jincheng Zhang, Yanqing Jia, Chaochao Yan, Boyu Wang, Dong Wang“...The realization of high-speed and high-power gallium nitride (GaN)-based devices using high-quality...”
Published 2020-12-01
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17by Long Zhou, Jie Su, Zhenhua Lin, Xing Guo, Jing Ma, Tao Li, Jincheng Zhang, Jincheng Zhang, Jingjing Chang, Jingjing Chang, Yue Hao, Yue Hao“... of 1.15 V, with a 0.42 V voltage deficit) occurs, compared to the control device. To relieve...”
Published 2021-01-01
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18by Chunfu Zhang, Shangzheng Pang, Ting Heng, Hailong You, Genquan Han, Gang Lu, Fengqin He, Qubo Jiang, Jincheng Zhang“...-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more...”
Published 2016-01-01
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19by Yangyang Gao, Ang Li, Qian Feng, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Wenxiang Mu, Zhitai Jia, Jincheng Zhang, Yue HaoGet full text
Published 2019-01-01
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20by Chenbo Liu, Chunfu Zhang, Shangzheng Pang, Hang Dong, Zeyang Zhang, Dazheng Chen, Weidong Zhu, Jincheng Zhang, Yue Hao“... obviously improve the device performance further. Various materials such as LiF, MgF<sub>2</sub>, Al<sub>2...”
Published 2020-01-01
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