Showing 1 - 20 results of 24 for search 'MATERIAL AND SEMICONDUCTOR DEVICES', query time: 1.15s Refine Results
  1. 1
    Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
    Subjects: “...gate material engineering...”
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    Article
  2. 2
    Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material
    by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Kun Yang
    Published 2021-08-01
    “...Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively...”
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    Article
  3. 3
    Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials
    “... constructed from the different two-dimensional materials have received widespread attention. Here, MoS<sub>2...”
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    Article
  4. 4
    TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance
    by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Haiwu Xie
    Published 2020-03-01
    “...-gate dielectric (H-DLTFET), respectively, use the narrow band-gap semiconductor Ge and SiGe materials...”
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    Article
  5. 5
    Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source
    by Haiwu Xie, Hongxia Liu, Shupeng Chen, Tao Han, Shulong Wang
    Published 2019-10-01
    Subjects: “...dual material gate-engineered heterostructure junctionless tfet(dmge-hjltfet)...”
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    Article
  6. 6
    Research on the Factors Affecting the Growth of Large-Size Monolayer MoS<sub>2</sub> by APCVD
    “...Materials...”
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    Article
  7. 7
    Design and Investigation of the Junction-Less TFET with Ge/Si<sub>0.3</sub>Ge<sub>0.7</sub>/Si Heterojunction and Heterogeneous Gate Dielectric
    “... semiconductor material germanium to obtain the higher on-state current; the gate dielectric adjacent...”
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    Article
  8. 8
    Fabrication and Characterization of MoS<sub>2</sub>/h-BN and WS<sub>2</sub>/h-BN Heterostructures
    “... heterostructure materials is provided in this paper. To obtain the preparation of MoS<sub>2</sub>/h-BN and WS<sub...”
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    Article
  9. 9
    Probing the Field-Effect Transistor with Monolayer MoS<sub>2</sub> Prepared by APCVD
    “...The two-dimensional materials can be used as the channel material of transistor, which can further...”
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    Article
  10. 10
    A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
    “... orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate...”
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    Article
  11. 11
    The Large-scale Preparation and Optical Properties of MoS<sub>2</sub>/WS<sub>2</sub> Vertical Hetero-junction
    by Tao Han, Hongxia Liu, Shulong Wang, Shupeng Chen, Kun Yang
    Published 2020-04-01
    “... in the different optoelectronic devices, such as the photo-detectors, solar cells, sensors and light-emitting...”
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    Article
  12. 12
    Probing the Optical Properties of MoS<sub>2</sub> on SiO<sub>2</sub>/Si and Sapphire Substrates
    “...As an important supplementary material to graphene in the optoelectronics field, molybdenum...”
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    Article
  13. 13
    Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition
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    Article
  14. 14
    Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer
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    Article
  15. 15
    Probing the Growth Improvement of Large-Size High Quality Monolayer MoS2 by APCVD
    “... gap of graphene in the field of nano-electronic devices, which is widely used in catalysis...”
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    Article
  16. 16
    Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor
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    Article
  17. 17
    The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor
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    Article
  18. 18
    Design and investigation of dopingless dual-gate tunneling transistor based on line tunneling
    “... to both Si and III-V materials. This design greatly promotes the application potential of DLTFET....”
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    Article
  19. 19
    The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET
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    Article
  20. 20
    A Doping-Less Tunnel Field-Effect Transistor with Si<sub>0.6</sub>Ge<sub>0.4</sub> Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance
    by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, Wei Li
    Published 2019-05-01
    “...> are used as source and channel materials, respectively, to provide higher carrier mobility and smaller...”
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    Article
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