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1“...-semiconductor (MOS) devices. With respect to the formation of stress-induced traps in gate oxide, dc stress...”
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2“...博士 === 國立臺灣大學 === 電子工程學研究所 === 102 === With the aggressive downscaling of MOS devices...”
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3“...碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === Metal-insulator-semiconductor (MIS) tunneling diode is a...”
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4“... characteristics of our targeting devices have definitely gotten enhanced through some simple adjustment...”
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5“... in the interface and the charges have different phases. As the device size increasing, the negative capacitance...”
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6“... and Metal-Insulator-Semiconductor models. In chapter 3, by using the effect of lateral diffusion current...”
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7“...Due to the simplicity of the fabrication process, the ultra-thin oxide metal-oxide-semiconductor...”
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8“... of the laterally gated metal-insulator-semiconductor (MIS) tunnel diode with Al/SiO2/Si(p) structure had been...”
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9“...-voltage characteristics of a double metal-insulator-semiconductor (MIS(p)) tunnel diode (TD) in a...”
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12“...-Semiconductor (RG MIS) tunnel diodes with various oxide thickness were demonstrated that the UTMSG MIS devices...”
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13“... and reliability of semiconductor devices. Especially, the quality of the gate dielectric layer is extremely...”
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14“... of semiconductor and the existence of the Moore， law, the size of device is scaling down continuously. However...”
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15“... in the fabrication of advanced semiconductor devices. However, the most common criticisms of RTP are about...”
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16“... of metal-Al2O3-SiO2-semiconductor capacitors is introduced. Measurement of equivalent oxide thickness...”
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17“... embedded aluminum in metal-insulator-semiconductor (MIS) tunnel diodes on the reduction of lateral non...”
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18“...碩士 === 國立臺灣大學 === 電子工程學研究所 === 98 === Because of the progress of the technology of semiconductor...”
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19“... of semiconductor, there are great results in the scaling of MOS devices. Based on the International Technology...”
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20“... technology in the fabrication of advanced semiconductor devices. However, the most common criticisms of RTP...”
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