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1“... semiconductor materials and related optoelectronic devices by using metalorganic vapor phase epitaxy. First...”
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2“...-V nitrides semiconductor that consist of undoped GaN, n-type GaN, p-type GaN, Si-doped InGaN layers...”
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3“.... The crystalline ZnO is naturally an n-type semiconductor. However, for the development of optoelectronic devices...”
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4“... bandwidth used in these applications day by day. Semiconductor laser diode emitting at the wavelength of 1.3...”
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5“... attractive in device application. In Te application, high quality quaternary ZnSSeTe epitaxial layers were...”
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6“... and analyses of nitride-based optoelectronics and microwave devices. Hence, the dissertationis divided into two...”
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7“...碩士 === 國立成功大學 === 微電子工程研究所 === 105 === In the thesis, two metal oxide semiconductor with wide...”
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8“... of transparent p-type ohmic contacts and the dry etching of GaN also play an important role in devices...”
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9“... and their applications on optoelectronic devices have been grown by metal organic vapor phase epitaxy (MOVPE). Several...”
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10“...-semiconductor (MIS) diodes and photoconductive (PC) detector devices. From capacitance-voltage...”
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11“... in Indium Antimonide Metal-Oxide-Semiconductor Field Effect Transistor U. H. Liaw...”
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12“... and characterization of InGaN/GaN self-assembled quantum dots (SAQDs) and related optoelectronic devices (MQD LEDs...”
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13“...碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === In the thesis, the resistive switching devices of metal...”
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14“... devices, including resonant cavity light emitting diodes (RCLEDS) and vertical cavity surface emitting...”
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15“... to metal semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) and field emission devices...”
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16“.... In the beginning of this dissertation, a novel memory device based on laterally bridged ZnO nanorods in opposite...”
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17“... of these epitaxial layers. The Schottky barrier diodes and metal-semiconductor-metal (MSM) photodetectors were...”
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18“... to apply in semiconductor devices. The normally off AlGaN/GaN HEMT is fabricated only through p-NiOx. Vth...”
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19“..., and the characteristics of OTFTs will be improved. Firstly, OTFTs devices were fabricated with top contact structure...”
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20“... conditions, optical properties, and devices characteristics are systematically studied. After optimizing...”
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