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2“... dependent voltages due to the devices and specific circuit design are taken into account.As both effects...”
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3“... stress in PMOS channel can improve device mobility and drain current. Part two investigated p-type TFT...”
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5“... of power semiconductor device by exploring and analyzing the influence of parasitic components inside...”
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6“... of nanostructures and oxide semiconductor devices. We provide an amorphous indium gallium zinc oxide transistor...”
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7“... optoelectronic semiconductor devices. The expectable merits of the LED array unit with a silicon micro reflector...”
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8“.... In recent years, a lot of efforts have been spent to improve the processes and devices structures of TFTs...”
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10“... of light field intensity happens near the p+ edge of the depletion layer, the device shows...”
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11“...碩士 === 大葉大學 === 電機工程學系 === 96 === Thermal management of semiconductor devices always plays...”
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13“... distance by using the HV18 CMOS technology. For the MR devices with metal-semiconductor hybrid structure...”
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14“... speed inmixed-level device and circuit simulation, we proposes to simplify the creation...”
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15“... method is suitable for modeling the devices used in where ultra high frequency, nonlinear, transient...”
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16“... parallelization and grid-point parallelization for semiconductor device...”
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18“...博士 === 國立清華大學 === 電子工程研究所 === 98 === GaN-based semiconductor materials play an important role...”
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19“.... These devices are shown to exhibit a filling factor near to an ideal close-packed condition and paraboloidlike...”
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