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A. P. Dolgolenko
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A. P. Dolgolenko
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A. P. Dolgolenko
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1
Modification of radiation defects in Si and Ge by background impurity
by
A
.
P
.
Dolgolenko
Published 2013-12-01
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Article
2
Diffuse and drift movement of electrons in n-type silicon, irradiated by reactor fast neutrons
by
A
.
P
.
Dolgolenko
Published 2011-06-01
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Article
3
Charge carrier mobility in the configuration restructuring divacancies in silicon
by
A
.
P
.
Dolgolenko
Published 2014-06-01
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Article
4
Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz)
by
A
.
P
.
Dolgolenko
,
G. P. Gaidar
,
P. G. Litovchenko
Published 2007-12-01
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Article
5
Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons
by
A
.
P
.
Dolgolenko
,
M. D. Varentsov
,
G. P. Gaidar
,
P. G. Litovchenko
Published 2008-08-01
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Article
6
Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons
by
A
.
P
.
Dolgolenko
,
M. D. Varentsov
,
G. P. Gaidar
,
P. G. Litovchenko
Published 2007-06-01
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Article
7
Radiation hardness of silicon doped by germanium with high concentration of free oxygen
by
M. D. Varentsov
,
G. P. Gaidar
,
A
.
P
.
Dolgolenko
,
P. G. Litovchenko
Published 2006-06-01
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Article
8
Ultrasound influence on the electrical activity of radiation defects in γ-irradiated n-type silicon crystals
by
V. M. Babych
,
A
.
P
.
Dolgolenko
,
Ja. M. Olikh
,
M. D. Tymochko
Published 2007-03-01
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